Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress
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DOI: 10.1109/led.2019.2953235
Abstract: The unique gate failure mode of SiC MOSFETs is often identified but has not been fully understood yet. In this letter, post-failure cell inspections demonstrate that its main cause is the crack at the SiO2… read more here.
Keywords: physics; sic mosfets; failure; failure physics ... See more keywords