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Published in 2017 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2016.2601606
Abstract: The failure rate of static RAM (SRAM) cells is restricted to be extremely low to ensure sufficient high yield for the entire chip. In addition, multiple performances of interest and influences from peripherals make SRAM…
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Keywords:
multiple failure;
high dimensional;
failure region;
dimensional multiple ... See more keywords