A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices
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DOI: 10.1109/tpel.2017.2749249
Abstract: Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their excellent switching performance. To maximize the performance of GaN devices, it is necessary to study the switching characteristics, which requires measuring the… read more here.
Keywords: fast gan; switching current; current measurement; gan devices ... See more keywords