Analysis of Defect-Related Electrical Fatigue in 4H-SiC Avalanche Photodiodes
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DOI: 10.1109/lpt.2018.2823706
Abstract: SiC-based avalanche photodiodes (APDs) are the preferred devices for use in high-sensitivity UV detectors. However, the defect densities on the surface or in the bulk of the SiC epitaxial layer limit the performance of APDs.… read more here.
Keywords: analysis defect; electrical fatigue; fatigue sic; avalanche photodiodes ... See more keywords