Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories
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DOI: 10.1063/5.0207501
Abstract: Hf0.5Zr0.5O2 (HZO) thin films are promising for applications in ferroelectric memories. However, these materials often face challenges, such as polarization fluctuations (e.g., fatigue and wake-up) and electric break-down incidents during the “1/0” write/read cycles, hindering… read more here.
Keywords: ferroelectric memories; break; hf0 5zr0; 5zr0 5o2 ... See more keywords