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Published in 2023 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/acd127
Abstract: The formation of recombination-induced bar shaped stacking faults (BSSFs) during forward voltage operation of SiC devices, can lead to increased voltage drop and enhanced device degradation. In this study, a triangular epitaxial defect is identified…
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Keywords:
nucleation source;
faults bssfs;
source;
stacking faults ... See more keywords