Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0K – Towards compact modeling for cryo CMOS application
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108126
Abstract: Abstract Poisson-Schrodinger (PS) simulations and an analytical charge model for a back biased FDSOI structure operated at deep cryogenic temperatures have been developed. PS simulations have been conducted down to 0K, where metallic statistics applies,… read more here.
Keywords: towards compact; inversion charge; poisson schr; charge ... See more keywords
Non-Boolean Associative Processing Using FDSOI MOSFET-Based Inverter
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2018.2871110
Abstract: Fully depleted silicon-on-insulator (FDSOI) MOSFET-based inverter is used as a distance computing cell (DCC) for non-Boolean associative processing system. Using back-gate bias in FDSOI transistors, the DCC shows excellent controllability of current characteristics of DCC.… read more here.
Keywords: boolean associative; non boolean; based inverter; associative processing ... See more keywords