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Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.12.002
Abstract: Abstract Systematic experiments demonstrate the presence of the kink effect even in FDSOI MOSFETs. The back-gate bias controls the kink effect via the formation of a back accumulation channel. The kink is more or less…
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Keywords:
effect;
fdsoi mosfets;
effect ultrathin;
kink effect ... See more keywords
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Published in 2025 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2025.3562752
Abstract: Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self-heating…
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Keywords:
self heating;
cryogenic temperatures;
heating effects;
effects region ... See more keywords