Ultra-low power 1T-DRAM in FDSOI technology
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.047
Abstract: A systematic study of a capacitorless 1T-DRAM fabricated in 28nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z2-FET memory cell features a large current sense margin and small OFF-state… read more here.
Keywords: fdsoi technology; power; dram; low power ... See more keywords
Compact CMOS-Compatible Majority Gate Using Body Biasing in FDSOI Technology
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Journal on Emerging and Selected Topics in Circuits and Systems"
DOI: 10.1109/jetcas.2023.3243150
Abstract: This is the first work that employs the body biasing feature, available in fully depleted silicon on insulator (FDSOI) technology nodes, to build CMOS-compatible compact majority (MAJ) and minority (MIN) logic gates. Compared to their… read more here.
Keywords: min gates; maj min; fdsoi technology; min ... See more keywords
Comprehensive Analytical Comparison of Ring Oscillators in FDSOI Technology: Current Starving Versus Back-Bias Control
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2022.3144527
Abstract: Back-bias control is a new degree of freedom brought by fully-depleted silicon-on-insulator (FDSOI) CMOS technologies, which can be used to control the oscillation frequency of voltage-controlled ring oscillators (VCROs). The resulting VCRO architecture is called… read more here.
Keywords: control; comparison; back bias; bias control ... See more keywords