Influence of ionisation track structure on 20 nm FDSOI transistor
Sign Up to like & getrecommendations! Published in 2021 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2021.114179
Abstract: Abstract The response of a 20-nm fully depleted silicon on insulator (FDSOI) transistor under irradiation by heavy ions is analysed using GEometry ANd Tracking (Geant4) and Synopsys Sentaurus device simulations. Because of the huge energy… read more here.
Keywords: track structure; influence ionisation; fdsoi transistor; energy ... See more keywords
Analysis of single-event effects in selected BOX-based FDSOI transistor and inverter
Sign Up to like & getrecommendations! Published in 2021 at "Radiation Physics and Chemistry"
DOI: 10.1016/j.radphyschem.2021.109526
Abstract: Abstract The existence of buried oxide aggravates the self-heating effect (SHE) in fully depleted silicon-on-insulator (FDSOI) device. To reduce SHE, a new structure named selected BOX-based (SELBOX) FDSOI transistor is introduced in this work, and… read more here.
Keywords: single event; selected box; fdsoi transistor; transistor ... See more keywords