Features of Defect Formation in Nanostructured Silicon under Ion Irradiation
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductors"
DOI: 10.1134/s1063782619060095
Abstract: Nanostructured silicon is irradiated by Si+ and He+ ions with energies of 200 and 150 keV, respectively. Destruction of the structure of irradiated samples and the accumulation of defects at different irradiation fluences are investigated… read more here.
Keywords: features defect; silicon; formation nanostructured; irradiation ... See more keywords