Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation
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DOI: 10.3390/nano10020340
Abstract: GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide… read more here.
Keywords: features photoelectric; irradiation; gamma irradiation; structural features ... See more keywords