Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains
Sign Up to like & getrecommendations! Published in 2020 at "Current Applied Physics"
DOI: 10.1016/j.cap.2020.07.020
Abstract: Abstract In this study, a device design of single-gated feedback field-effect transistors (FBFETs) is proposed to achieve latch-up behaviors with high current gains. The latch-up mechanism is examined by conducting an equivalent circuit analysis, and… read more here.
Keywords: feedback field; single gated; device design; gated feedback ... See more keywords
Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure
Sign Up to like & getrecommendations! Published in 2024 at "Scientific Reports"
DOI: 10.1038/s41598-024-57290-w
Abstract: In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in… read more here.
Keywords: logic memory; ternary logic; binary ternary; nanosheet feedback ... See more keywords
Logic and static memory functions of an inverter comprising a feedback field effect transistor
Sign Up to like & getrecommendations! Published in 2025 at "Nanotechnology"
DOI: 10.1088/1361-6528/adbf27
Abstract: The von Neumann architecture used as the basic operating principle in computers has a bottleneck owing to the disparity between the central processing unit and memory access speeds, which leads to high power consumption and… read more here.
Keywords: memory; logic; memory functions; field effect ... See more keywords
Development of In-Memory Computing Device Using Positive Feedback Field Effect Transistor Based on NAND Flash Array
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Access"
DOI: 10.1109/access.2025.3548572
Abstract: In this study, we propose a feedback field effect transistor (FBFET) in-memory computing device based on the string of NAND flash array. By combining the polysilicon-blocking oxide-silicon nitride-tunneling oxide-silicon (SONOS) cell structure and N+-P $^{-}$… read more here.
Keywords: memory; memory computing; device; field effect ... See more keywords
Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14030504
Abstract: In this study, the device characteristics of silicon nanowire feedback field-effect transistors were predicted using technology computer-aided design (TCAD)-augmented machine learning (TCAD-ML). The full current–voltage (I-V) curves in forward and reverse voltage sweeps were predicted… read more here.
Keywords: field effect; tcad augmented; feedback field; device characteristics ... See more keywords
Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States
Sign Up to like & getrecommendations! Published in 2024 at "Nanomaterials"
DOI: 10.3390/nano14020210
Abstract: In this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and… read more here.
Keywords: memory; field effect; feedback field; memory states ... See more keywords
Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor
Sign Up to like & getrecommendations! Published in 2024 at "Nanomaterials"
DOI: 10.3390/nano14201667
Abstract: Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process… read more here.
Keywords: steep switching; field effect; demonstration steep; feedback field ... See more keywords