Femto- and nanosecond pulse laser ablation dependence on irradiation area: The role of defects in metals and semiconductors
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DOI: 10.1016/j.apsusc.2016.12.141
Abstract: Abstract Pulse laser ablation experiments at semiconductor-grade silicon 〈111〉 and SAE 304 stainless steel were performed with femto- and nanosecond pulse durations. Threshold fluences in dependence of beam radius (1.6–100 μm) and density of low-density defects… read more here.
Keywords: dependence; ablation; nanosecond pulse; laser ablation ... See more keywords