Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy
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DOI: 10.1109/tmag.2021.3085853
Abstract: Direct epitaxial integration of magnetic layers with wide bandgap nitride semiconductors will enable spin-controlled transport and photonic phenomena, seeding ideas for functional spintronic devices. Using plasma-assisted molecular beam epitaxy (MBE) in a previously unexplored window,… read more here.
Keywords: molecular beam; mn4n layers; beam epitaxy; mn4n ... See more keywords