Effect of a ZrO2 Seed Layer on an Hf0.5Zr0.5O2 Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
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DOI: 10.3390/ma16051959
Abstract: In this study, a ferroelectric layer was formed on a ferroelectric device via plasma enhanced atomic layer deposition. The device used 50 nm thick TiN as upper and lower electrodes, and an Hf0.5Zr0.5O2 (HZO) ferroelectric… read more here.
Keywords: via plasma; ferroelectric device; plasma enhanced; layer ... See more keywords