Flexible, Temperature‐Stable, and Fatigue‐Endurable PbZr0.52Ti0.48O3 Ferroelectric Film for Nonvolatile Memory
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DOI: 10.1002/aelm.201900443
Abstract: Flexible memory devices represent an emerging technological goal for information storage and data processing in portable, wearable, and smart electronics that work in curved conditions. This work presents a direct and cost‐effective fabrication of a… read more here.
Keywords: pbzr0 52ti0; 52ti0 48o3; film; memory ... See more keywords