Analysis on Reverse Drain-Induced Barrier Lowering and Negative Differential Resistance of Ferroelectric-Gate Field-Effect Transistor Memory
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DOI: 10.1109/led.2020.3000766
Abstract: We demonstrate novel analysis on electrical characteristics of ferroelectric-gate field effect transistor (FeFET), especially reverse DIBL (RDIBL) and negative differential resistance (NDR) phenomena through measurements of fabricated FeFETs and technology computer-aided design (TCAD) simulations. The… read more here.
Keywords: ferroelectric gate; negative differential; gate; field effect ... See more keywords