Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf0.5Zr0.5O2.
Sign Up to like & getrecommendations! Published in 2018 at "Nanotechnology"
DOI: 10.1088/1361-6528/aaacb1
Abstract: The electronic structure of oxygen-deficient Hf0.5Zr0.5O2 in the non-centrosymmetric orthorhombic (ferroelectric) phase was investigated by means of x-ray photoelectron spectroscopy and first-principle density functional theory calculations. It was established that a peak in the photoelectron… read more here.
Keywords: oxygen; electronic structure; oxygen vacancies; hf0 5zr0 ... See more keywords
Improved Endurance of Ferroelectric Hf0.5Zr0.5O2 Using Laminated-Structure Interlayer
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DOI: 10.3390/nano13101608
Abstract: In this article, the endurance characteristic of the TiN/HZO/TiN capacitor was improved by the laminated structure of a ferroelectric Hf0.5Zr0.5O2 thin film. Altering the HZO deposition ratio, the laminated-structure interlayer was formed in the middle… read more here.
Keywords: endurance; structure; structure interlayer; ferroelectric hf0 ... See more keywords