Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c22426
Abstract: Doped HfO2 thin films, which exhibit robust ferroelectricity even with aggressive thickness scaling, could potentially enable ultralow-power logic and memory devices. The ferroelectric properties of such materials are strongly intertwined with the voltage-cycling-induced electrical and… read more here.
Keywords: layer; interfacial layer; field cycling; ferroelectric hf1 ... See more keywords
Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5090036
Abstract: Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x = 0.5–0.7) on technologically important (100) Germanium substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of… read more here.
Keywords: oxygen deposition; ferroelectric hf1; assisted atomic; plasma assisted ... See more keywords