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Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201901356
Abstract: Ferroelectric gating of functional materials has often suffered because ferroelectric materials are poor insulators. In this study, the recently reported ferroelectric HfO2, a large band‐gap oxide with excellent insulating properties, is exploited for electrostatically gating…
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Keywords:
hfo2;
insulator;
metal insulator;
insulator transition ... See more keywords
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Published in 2020 at "Nano Energy"
DOI: 10.1016/j.nanoen.2020.104733
Abstract: Abstract Pyroelectric coefficients are measured for Si, Sr, La, Al, and Gd doped HfO2 thin films as well as the solid-solution Hf0.5Zr0.5O2 composition from 280 to 440 K. Pyroelectric currents show sensitivity to the dopant used…
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Keywords:
hfo2 thin;
thin films;
ferroelectric hfo2;
curie constant ... See more keywords
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Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab814b
Abstract: e show experimentally that the ferroelectric HfZrO induces a bandgap of 0.18 eV in graphene monolayer. The experiments are performed on top-gate graphene/HfZrO transistors showing a very high transconductance of 1 mS and very carrier…
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Keywords:
bandgap induced;
ferroelectric hfo2;
graphene bandgap;
hfzro ... See more keywords
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Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/abb2bf
Abstract: In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO2/Ge-HfO2/HfO2 three-layer structure. This kind of transistor has a switching…
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Keywords:
wafer scale;
graphene;
three terminal;
ferroelectric hfo2 ... See more keywords