Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate
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DOI: 10.1063/1.5124402
Abstract: Ferroelectric HfxZryOz (HZO) with an average polarization switching window of 32 µC/cm2 was demonstrated on a Si substrate with a ZrO2 interfacial layer (IL). It is suggested that the ZrO2 IL below HZO crystallizes in… read more here.
Keywords: zro2 interfacial; ferroelectric hfxzryoz; layer; hzo ... See more keywords