Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory
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DOI: 10.1109/led.2018.2831784
Abstract: In this letter, ferroelectric memory performance of TiN/Y-doped-HfO2 (HYO)/TiN capacitors is investigated under proton radiation with 3-MeV energy and different fluence (5e13, 1e14, 5e14, and 1e15 ions/cm2). X-ray diffraction patterns confirm that the orthorhombic phase… read more here.
Keywords: doped hfo2; ferroelectric memory; proton; proton radiation ... See more keywords