Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity
Sign Up to like & getrecommendations! Published in 2020 at "Science China Materials"
DOI: 10.1007/s40843-020-1444-1
Abstract: Memristors are designed to mimic the brain’s integrated functions of storage and computing, thus breaking through the von Neumann framework. However, the formation and breaking of the conductive filament inside a conventional memristor is unstable,… read more here.
Keywords: ferroelectric memristor; storage; multilevel storage; hf0 5zr0 ... See more keywords
New-Style Logic Operation and Neuromorphic Computing Enabled by Optoelectronic Artificial Synapses in an MXene/Y:HfO2 Ferroelectric Memristor.
Sign Up to like & getrecommendations! Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.4c05316
Abstract: Today's computing systems, to meet the enormous demands of information processing, have driven the development of brain-inspired neuromorphic systems. However, there are relatively few optoelectronic devices in most brain-inspired neuromorphic systems that can simultaneously regulate… read more here.
Keywords: optoelectronic artificial; mxene hfo2; artificial synapses; logic ... See more keywords
Implementation of habituation on single ferroelectric memristor
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0141710
Abstract: As a basic form of behavioral plasticity, habituation enables organisms to adjust their behaviors in response to external stimulation and is a fundamental ability of organisms. The emulation of habituation in hardware becomes critical in… read more here.
Keywords: behavior; habituation single; habituation; single ferroelectric ... See more keywords
A temperature sensing based Na0.5Bi0.5TiO3 ferroelectric memristor device for artificial neural systems
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0190861
Abstract: With the development of artificial intelligence technology, it remains a challenge to improve the resistive switching performance of next-generation nonvolatile ferroelectric memristor device (FMD). Here, we report an epitaxial Na0.5Bi0.5TiO3 ferroelectric memristor device (NBT-FMD) with… read more here.
Keywords: memristor; temperature; ferroelectric memristor; memristor device ... See more keywords