Ferroelectric Nanogap-Based Steep-Slope Ambipolar Transistor.
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DOI: 10.1002/smll.202203017
Abstract: The subthreshold swing (SS) of metal-oxide-semiconductor field-effect transistors is limited to 60 mV dec-1 at room temperature by the Boltzmann tyranny, which restricts the scaling of the supply voltage. A nanogap-based transistor employs a switchable nanoscale… read more here.
Keywords: nanogap based; transistor; ferroelectric nanogap; steep slope ... See more keywords