Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c22798
Abstract: Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth elements, e.g., scandium, has presented a pivotal step toward next-generation electronic, acoustic, photonic, and quantum devices and systems. To date, however, the conventional growth of… read more here.
Keywords: ferroelectric nitride; molybdenum; nitride semiconductors; cmos compatible ... See more keywords
Large spin splittings due to the orbital degree of freedom and spin textures in a ferroelectric nitride perovskite
Sign Up to like & getrecommendations! Published in 2020 at "Physical Review B"
DOI: 10.1103/physrevb.102.041203
Abstract: First-principles simulations are conducted to predict that ferroelectric nitride perovskite $\mathrm{LaW}{\mathrm{N}}_{3}$ not only exhibits large spin splittings (2.7 eV \AA{}) but also possesses unique spin textures for some of its conduction levels. Such spin splittings… read more here.
Keywords: ferroelectric nitride; large spin; nitride perovskite; spin ... See more keywords