Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c22798
Abstract: Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth elements, e.g., scandium, has presented a pivotal step toward next-generation electronic, acoustic, photonic, and quantum devices and systems. To date, however, the conventional growth of… read more here.
Keywords: ferroelectric nitride; molybdenum; nitride semiconductors; cmos compatible ... See more keywords
Unveiling the Pockels coefficient of ferroelectric nitride ScAlN
Sign Up to like & getrecommendations! Published in 2024 at "Nature Communications"
DOI: 10.1038/s41467-024-53895-x
Abstract: Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics due to their compatibility with mainstream semiconductor processing. ScAlN, in particular, has exhibited remarkable piezoelectric coupling strength (K2) comparable to that of lithium niobate,… read more here.
Keywords: pockels coefficient; pockels effect; scaln; ferroelectric nitride ... See more keywords
Large spin splittings due to the orbital degree of freedom and spin textures in a ferroelectric nitride perovskite
Sign Up to like & getrecommendations! Published in 2020 at "Physical Review B"
DOI: 10.1103/physrevb.102.041203
Abstract: First-principles simulations are conducted to predict that ferroelectric nitride perovskite $\mathrm{LaW}{\mathrm{N}}_{3}$ not only exhibits large spin splittings (2.7 eV \AA{}) but also possesses unique spin textures for some of its conduction levels. Such spin splittings… read more here.
Keywords: ferroelectric nitride; large spin; nitride perovskite; spin ... See more keywords