Carbon nanotube ferroelectric random access memory cell based on omega-shaped ferroelectric gate
Sign Up to like & getrecommendations! Published in 2020 at "Carbon"
DOI: 10.1016/j.carbon.2020.02.044
Abstract: Abstract This paper presents a flexible ferroelectric random access memory (FeRAM) cell with a one-transistor-one-transistor structure. The FeRAM cell was composed of a control transistor (CT) and an omega-shaped ferroelectric memory transistor (MT). An inkjet-printed… read more here.
Keywords: shaped ferroelectric; ferroelectric random; gate; omega shaped ... See more keywords
Characterization of Ferroelectric Random Access Memory (FRAM) Storage Capacitors
Sign Up to like & getrecommendations! Published in 2020 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927620017985
Abstract: Ferroelectric materials have unique properties including polarization hysteresis, high permittivity, and enhanced piezoelectric effects. These properties make ferroelectric materials good candidates for applications such as non-volatile memories, capacitors, and sensors. [1] Specifically, ferroelectric random access… read more here.
Keywords: random access; storage capacitors; fram storage; memory ... See more keywords
Promising Engineering Approaches for Improving the Reliability of HfZrOx 2-D and 3-D Ferroelectric Random Access Memories
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3028528
Abstract: The main challenge in ferroelectric (FE) random access memory (FRAM) scaling is to maintain a high polarization density on the vertical sidewall of 3-D FE capacitors. Two simple and effective methods—stress engineering and optimized interface… read more here.
Keywords: tex math; inline formula; ferroelectric random;
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Sign Up to like & getrecommendations! Published in 2018 at "Mrs Bulletin"
DOI: 10.1557/mrs.2018.92
Abstract: Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling. Hafnium oxide is a standard material available in… read more here.
Keywords: hafnium oxide; hafnia; ferroelectric random; field ... See more keywords