Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe
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DOI: 10.1002/adma.202200323
Abstract: A large Rashba effect is essential for future applications in spintronics. Particularly attractive is understanding and controlling nonequilibrium properties of ferroelectric Rashba semiconductors. Here, time‐ and angle‐resolved photoemission is utilized to access the ultrafast dynamics… read more here.
Keywords: bulk surface; thermalization; temperature; electron electron ... See more keywords
High-Throughput Inverse Design for 2D Ferroelectric Rashba Semiconductors.
Sign Up to like & getrecommendations! Published in 2022 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.2c08827
Abstract: A long-standing goal in spintronics is electric control of spin. Herein, we perform an inverse design to search for 2D ferroelectric Rashba semiconductors, whose spin texture can be precisely and readily reversed by switching ferroelectric… read more here.
Keywords: rashba semiconductors; inverse design; rashba; design ... See more keywords