A novel electrostatically doped ferroelectric Schottky barrier tunnel FET: process resilient design
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DOI: 10.1007/s10825-017-0987-6
Abstract: This work investigates a process-variation resilient electrostatically-doped ferroelectric Schottky-barrier tunnel FET (ED-FE-SB-TFET) based on negative capacitance (NC). The key attributes of ED-FE-SB-TFET are perovskite ferroelectric (FE) gate stack-induced NC behavior and electrostatic doping to induce… read more here.
Keywords: schottky barrier; electrostatically doped; barrier; doped ferroelectric ... See more keywords