Multisensory Ferroelectric Semiconductor Synapse for Neuromorphic Computing
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202313010
Abstract: Integrated multifunctionality in visual information processing is crucial in the artificial intelligence era. Compared to the parallel human vision system, current bionic vision devices exhibit a complex structure with single functionality, challenging intelligent processing and… read more here.
Keywords: synapse; processing; multisensory ferroelectric; semiconductor synapse ... See more keywords
Unraveling In-Plane Crystallographic Anisotropy-Dependent Memory Performance In Van Der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors.
Sign Up to like & getrecommendations! Published in 2025 at "Advanced materials"
DOI: 10.1002/adma.202517849
Abstract: The ferroelectric semiconductor field-effect transistors (FeS-FETs) based on α-In2Se3 emerge as promising non-volatile memory devices. However, the intrinsic in-plane (IP) crystallographic anisotropy of α-In2Se3 introduces orientation dependence, leading to pronounced variations in memory performance depending… read more here.
Keywords: memory; effect transistors; field effect; anisotropy ... See more keywords
Artificial Optoelectronic Synapses Based on Light‐Controllable Ferroelectric Semiconductor Memristor
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Optical Materials"
DOI: 10.1002/adom.202302887
Abstract: Numerous synaptic devices have been explored for the next generation of energy‐efficient computing techniques. Among them, optoelectronic synaptic devices based on semiconductor/ferroelectric heterostructures have received a lot of attention lately due to their amazing parallelism,… read more here.
Keywords: semiconductor; light controllable; optoelectronic synapses; ferroelectric semiconductor ... See more keywords
Al0.68Sc0.32N/SiC-Based Metal-Ferroelectric-Semiconductor Capacitors Operating up to 1000 °C.
Sign Up to like & getrecommendations! Published in 2024 at "Nano letters"
DOI: 10.1021/acs.nanolett.4c06178
Abstract: Ferroelectric (Fe) materials-based devices show great promise for nonvolatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature nonvolatile memory applications. Our 30 nm… read more here.
Keywords: metal ferroelectric; al0 68sc0; 32n sic; 68sc0 32n ... See more keywords
Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c19930
Abstract: Negative capacitance (NC) is now an attractive research topic owing to its potential applications. For better integration, investigation about the phenomenon and mechanism of NC in ferroelectric materials on semiconductor substrates is important. In this… read more here.
Keywords: negative capacitance; semiconductor; ferroelectric semiconductor; direct measurement ... See more keywords
A ferroelectric semiconductor field-effect transistor
Sign Up to like & getrecommendations! Published in 2018 at "Nature Electronics"
DOI: 10.1038/s41928-019-0338-7
Abstract: Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use… read more here.
Keywords: field effect; ferroelectric semiconductor; semiconductor field;
Two-dimensional α-In2Se3-based ferroelectric semiconductor junction for reconfigurable photodetectors
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0149503
Abstract: The proliferation of visual information promoted in part by the Internet of Things is increasing demand for high-quality imaging, which in turn imposes more stringent physical requirements on photodetectors. Given that dark current is a… read more here.
Keywords: two dimensional; semiconductor; ferroelectric semiconductor; semiconductor junction ... See more keywords
Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe.
Sign Up to like & getrecommendations! Published in 2018 at "Physical review letters"
DOI: 10.1103/physrevlett.121.017402
Abstract: The shift current (SHC) has been accepted as the primary mechanism of the bulk photovoltaic effect (BPVE) in ferroelectrics, which is much different from the typical p-n junction-based photovoltaic mechanism in heterogeneous materials. In the… read more here.
Keywords: response; photovoltaic effect; semiconductor gete; bulk photovoltaic ... See more keywords