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Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c19930
Abstract: Negative capacitance (NC) is now an attractive research topic owing to its potential applications. For better integration, investigation about the phenomenon and mechanism of NC in ferroelectric materials on semiconductor substrates is important. In this…
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Keywords:
negative capacitance;
semiconductor;
ferroelectric semiconductor;
direct measurement ... See more keywords
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Published in 2018 at "Nature Electronics"
DOI: 10.1038/s41928-019-0338-7
Abstract: Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use…
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Keywords:
field effect;
ferroelectric semiconductor;
semiconductor field;
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Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0149503
Abstract: The proliferation of visual information promoted in part by the Internet of Things is increasing demand for high-quality imaging, which in turn imposes more stringent physical requirements on photodetectors. Given that dark current is a…
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Keywords:
two dimensional;
semiconductor;
ferroelectric semiconductor;
semiconductor junction ... See more keywords
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Published in 2018 at "Physical review letters"
DOI: 10.1103/physrevlett.121.017402
Abstract: The shift current (SHC) has been accepted as the primary mechanism of the bulk photovoltaic effect (BPVE) in ferroelectrics, which is much different from the typical p-n junction-based photovoltaic mechanism in heterogeneous materials. In the…
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Keywords:
response;
photovoltaic effect;
semiconductor gete;
bulk photovoltaic ... See more keywords