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Published in 2021 at "Applied Materials Today"
DOI: 10.1016/j.apmt.2021.101122
Abstract: Abstract Germanium telluride (GeTe), which has long been used in phase-change devices, has very unique structural characteristics. While atomic movement and related bond-order switching have been believed to determine the ferroelectric characteristics of this compound,…
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Keywords:
phase transition;
ferroelectric switching;
switching gete;
rotation lone ... See more keywords
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Published in 2017 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927617008807
Abstract: Ferroelectric metal-oxide thin films grown on semiconductor substrates are being studied due to their potential applications in non-volatile single transistor memory elements [1]. Epitaxial single-crystalline BaTiO3 (BTO) thin film was successfully grown on polar GaAs…
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Keywords:
microscopy;
ferroelectric switching;
film;
batio3 ... See more keywords
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Published in 2024 at "Nano letters"
DOI: 10.1021/acs.nanolett.4c05062
Abstract: When two BN layers are stacked in parallel in an AB or BA arrangement, a spontaneous out-of-plane electric polarization arises due to charge transfer in the out-of-plane B-N bonds. The ferroelectric switching from AB to…
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Keywords:
switching hbn;
plane;
wse2 monolayer;
ferroelectric switching ... See more keywords
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Published in 2024 at "ACS Applied Nano Materials"
DOI: 10.1021/acsanm.4c04549
Abstract: The pursuit of extreme device miniaturization and the exploration of novel physical phenomena have spurred significant interest in crystallographic phase control and ferroelectric switching in reduced dimensions. Recently, wurtzite ferroelectrics have emerged as a new…
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Keywords:
scaln nanowires;
transition;
wurtzite ferroelectrics;
phase ... See more keywords
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Published in 2025 at "ACS nano"
DOI: 10.1021/acsnano.5c13014
Abstract: Layered perovskite oxides have emerged as a promising class of ferroelectric materials, yet their layered structure and nontrivial switching mechanisms require deeper investigation. Here, epitaxial Aurivillius-phase Bi2WO6 thin films are shown to exhibit crystallographic tilts…
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Keywords:
step;
step edges;
planar defects;
switching dynamics ... See more keywords
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Published in 2023 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.3c00634
Abstract: Controlling molecular chirality by external stimuli is of great significance in both fundamental research and technological applications. Herein, we report a high-temperature (384 K) molecular ferroelectric of a Cu(II) complex whose spontaneous polarization can be…
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Keywords:
molecular chirality;
two dimensional;
dimensional perovskite;
ferroelectric switching ... See more keywords
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Published in 2019 at "Nature Communications"
DOI: 10.1038/s41467-019-12750-0
Abstract: The ability to manipulate domains underpins function in applications of ferroelectrics. While there have been demonstrations of controlled nanoscale manipulation of domain structures to drive emergent properties, such approaches lack an internal feedback loop required…
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Keywords:
using deep;
neural networks;
ferroelectric switching;
recurrent neural ... See more keywords
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Published in 2025 at "Journal of Materials Chemistry A"
DOI: 10.1039/d4ta07884e
Abstract: Integrating two-dimensional (2D) ferroelectric materials into van der Waals (vdW) heterostructures for photocatalytic water splitting provides new opportunities to solve the energy crisis and environmental pollution. However, the effect of...
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Keywords:
driven photocatalytic;
switching driven;
water;
photocatalytic overall ... See more keywords
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1
Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0148284
Abstract: Reducing the switching energy and improving the switching speed of ferroelectrics remain an important goal in the pursuit of electronic devices with ultralow energy consumption and ultrafast response. Molecular ferroelectrics with concise dipole switching mechanism…
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Keywords:
tuning ferroelectric;
molecular ferroelectrics;
ferroelectric switching;
switching via ... See more keywords
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Published in 2025 at "MRS Communications"
DOI: 10.1557/s43579-025-00709-w
Abstract: This work reports the role of different metal bottom electrodes such as Tungsten (W), Titanium/Ruthenium (Ti/Ru), and Scandium (Sc) on the Ferroelectric Switching of sub-100-nm Al1-xScxN thin films deposited via reactive co-sputtering techniques. The impact…
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Keywords:
interfaces ferroelectric;
impact electrodes;
thin films;
al1 xscxn ... See more keywords