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   Articles with "ferroelectric thin" as a keyword



Reversible Optical Control of Polarization in Epitaxial Ferroelectric Thin Films

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recommendations! Published in 2024 at "Advanced Materials"

DOI: 10.1002/adma.202312437

Abstract: Light is an effective tool to probe the polarization and domain distribution in ferroelectric materials passively, that is, non‐invasively, for example, via optical second harmonic generation (SHG). With the emergence of oxide electronics, there is… read more here.

Keywords: control; thin films; ferroelectric thin; polarization ... See more keywords

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films

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recommendations! Published in 2024 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202400324

Abstract: Charged domain walls in ferroelectrics hold great promise for applications in ferroelectric random‐access memory (FeRAM), with advantages such as low energy consumption, high density, and non‐destructive operation. Due to the mechanical compatibility condition, the neutral… read more here.

Keywords: charged domain; intrinsically stable; thin films; ferroelectric thin ... See more keywords
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Natural-superlattice structured CaBi 2 Nb 2 O 9 -Bi 4 Ti 3 O 12 ferroelectric thin films

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recommendations! Published in 2017 at "Ceramics International"

DOI: 10.1016/j.ceramint.2017.03.197

Abstract: Natural-superlattice-structured/intergrowth CaBi 2 Nb 2 O 9 -Bi 4 Ti 3 O 12 (CBNO-BIT) ferroelectric thin films were successfully prepared via a magnetron sputtering process. XRD and TEM analysis revealed the [Bi 2 O 2… read more here.

Keywords: structured cabi; thin films; natural superlattice; ferroelectric thin ... See more keywords

The effect of the annealing atmosphere on the properties of Sr2Bi4Ti5O18 ferroelectric thin films

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recommendations! Published in 2019 at "Ceramics International"

DOI: 10.1016/j.ceramint.2019.06.045

Abstract: Abstract The Sr2Bi4Ti5O18 (SBT-5) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrate using the sol-gel method and annealing in oxygen, air, and nitrogen. Their properties were measured. After annealing in oxygen, the films showed good… read more here.

Keywords: annealing oxygen; effect annealing; thin films; ferroelectric thin ... See more keywords

Effect of electrode on dielectric susceptibility and pyroelectric properties of a ferroelectric thin film capacitor using landau-khalatnikov theory

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recommendations! Published in 2020 at "Chinese Journal of Physics"

DOI: 10.1016/j.cjph.2020.09.029

Abstract: Abstract The influence of electrodes on the dielectric susceptibility and pyroelectric properties of a ferroelectric thin film with surface transition layers has been investigated within the framework of Landau-Khalatnikov dynamic theory. The contribution of the… read more here.

Keywords: properties ferroelectric; ferroelectric thin; pyroelectric properties; thin film ... See more keywords
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Lead-free perovskite ferroelectric thin films with narrow direct band gap suitable for solar cell applications

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recommendations! Published in 2017 at "Materials Research Bulletin"

DOI: 10.1016/j.materresbull.2017.07.020

Abstract: Abstract [KNbO 3 ] 0.9 [BaNi 1/2 Nb 1/2 O 3 ] 0.1 (KBNNO) perovskite ferroelectric thin films with narrow band gap (up to 1.39 eV) and good ferroelectric properties are prepared successfully by pulsed laser… read more here.

Keywords: gap; thin films; perovskite ferroelectric; band gap ... See more keywords
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Strain engineering of dischargeable energy density of ferroelectric thin-film capacitors

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recommendations! Published in 2020 at "Nano Energy"

DOI: 10.1016/j.nanoen.2020.104665

Abstract: Abstract Ferroelectric oxide thin-film capacitors find applications in microelectronic systems, mobile platforms, and miniaturized power devices. They can withstand higher electric fields and display significantly larger energy densities than their bulk counterparts and exhibit higher… read more here.

Keywords: energy; thin film; ferroelectric thin; dischargeable energy ... See more keywords

Controlled Porosity in Ferroelectric BaTiO3 Photoanodes

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recommendations! Published in 2022 at "ACS Applied Materials & Interfaces"

DOI: 10.1021/acsami.1c17419

Abstract: The use of ferroelectric polarization to promote electron–hole separation has emerged as a promising strategy to improve photocatalytic activity. Although ferroelectric thin films with planar geometry have been largely studied, nanostructured and porous ferroelectric thin… read more here.

Keywords: microscopy; porosity ferroelectric; thin films; pbto thin ... See more keywords

Nanocrystalline Engineering Induced High Energy Storage Performances of Fatigue-Free Ba2Bi3.9Pr0.1Ti5O18 Ferroelectric Thin Films.

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recommendations! Published in 2022 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.2c01238

Abstract: Electrostatic capacitors, though presenting faster rate capability and higher power density, are hindered in applications because of their low energy density. Accordingly, many efforts in electrostatic capacitors, for electronics and electrical power systems, have mainly… read more here.

Keywords: high energy; nanocrystalline engineering; energy; thin films ... See more keywords

Origin of the Critical Thickness in Improper Ferroelectric Thin Films.

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recommendations! Published in 2023 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.3c00412

Abstract: Improper ferroelectrics are expected to be more robust than conventional ferroelectrics against depolarizing field effects and to exhibit a much-desired absence of critical thickness. Recent studies, however, revealed the loss of ferroelectric response in epitaxial… read more here.

Keywords: improper ferroelectric; critical thickness; ferroelectric thin; thin films ... See more keywords

High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide.

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recommendations! Published in 2024 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.3c16427

Abstract: Preventing ferroelectric materials from losing their ferroelectricity over a low thickness of several nanometers is crucial in developing multifunctional nanoelectronics. Epitaxially grown 5 at. % yttrium-doped Hf0.5Zr0.5O2 (YHZO) thin films exhibit an atomically smooth surface,… read more here.

Keywords: memory window; memory; yttrium doped; ferroelectric thin ... See more keywords