Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In2Se3 Ferroelectric Tunnel Junctions
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202407253
Abstract: Ferroelectric tunnel junctions (FTJs) have gained substantial attention as emerging electronic devices such as nonvolatile memory and artificial synapse, owing to their low power consumption and nonvolatile properties. In this work, a 2D semiconductor (2DS)/α‐In2Se3/metal… read more here.
Keywords: semiconductor; negative differential; tunnel junctions; ferroelectric tunnel ... See more keywords
A van der Waals Ferroelectric Tunnel Junction for Ultrahigh‐Temperature Operation Memory
Sign Up to like & getrecommendations! Published in 2022 at "Small Methods"
DOI: 10.1002/smtd.202101583
Abstract: Facing the constant scaling down and thus increasingly severe self‐heating effect, developing ultrathin and heat‐insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable… read more here.
Keywords: tunnel junction; van der; temperature operation; der waals ... See more keywords
Ferroelectric Tunnel Junctions Enhanced by a Polar Oxide Barrier Layer.
Sign Up to like & getrecommendations! Published in 2019 at "Nano letters"
DOI: 10.1021/acs.nanolett.9b03056
Abstract: Ferroelectric tunnel junctions (FTJs) have recently aroused significant interest due to the interesting physics controlling their properties and potential application in non-volatile memory devices. In this work, we propose a new concept to design high… read more here.
Keywords: tunnel junctions; polar oxide; layer; tunnel ... See more keywords
Spin-Filtering Ferroelectric Tunnel Junctions as Multiferroic Synapses for Neuromorphic Computing.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c16385
Abstract: As nanoelectronic synapses, memristive ferroelectric tunnel junctions (FTJs) have triggered great interest due to the potential applications in neuromorphic computing for emulating biological brains. Here, we demonstrate multiferroic FTJ synapses based on the ferroelectric modulation… read more here.
Keywords: spin filtering; neuromorphic computing; ferroelectric tunnel; tunnel junctions ... See more keywords
Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays.
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c14952
Abstract: In the quest for highly scalable and three-dimensional (3D) stackable memory components, ferroelectric tunnel junction (FTJ) crossbar architectures are promising technologies for nonvolatile logic and neuromorphic computing. Most FTJs, however, require additional nonlinear devices to… read more here.
Keywords: high density; ferroelectric tunnel; imprinting effect;
A Multistate Non-Volatile Photoelectronic Memory Device Based on Ferroelectric Tunnel Junction with Modulable Visible Light Photoresponse.
Sign Up to like & getrecommendations! Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.4c02067
Abstract: Recently, certain ferroelectric tunnel junctions (FTJs) exhibit non-volatile modulations on photoresponse as well as tunneling electroresistance (TER) effects related to ferroelectric polarization states. From the opposite perspective, the corresponding polarization states can be read by… read more here.
Keywords: non volatile; visible light; photoresponse; ferroelectric tunnel ... See more keywords
Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b18363
Abstract: Recently, complementary resistive switches (CRSs) have attracted considerable attention because of the effective suppression of the sneak leakage that is an inherent problem of crossbar memory arrays. In this work, we propose a new CRS… read more here.
Keywords: tunnel junctions; complementary resistive; ferroelectric tunnel; resistive switches ... See more keywords
Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d1nr06525d
Abstract: Recently, ferroelectric tunnel junctions (FTJs) have gained extensive attention as possible candidates for emerging memory and synaptic devices for neuromorphic computing. However, the working principles of FTJs remain controversial despite the importance of understanding them.… read more here.
Keywords: noise; ferroelectric tunnel; accurate analysis; spectroscopy ... See more keywords
Nanotube ferroelectric tunnel junctions with an ultrahigh tunneling electroresistance ratio.
Sign Up to like & getrecommendations! Published in 2024 at "Materials horizons"
DOI: 10.1039/d3mh02006a
Abstract: Low-dimensional ferroelectric tunnel junctions are appealing for the realization of nanoscale nonvolatile memory devices due to their inherent advantages of device miniaturization. Those based on current mechanisms have limitations, including low tunneling electroresistance (TER) effects… read more here.
Keywords: tunneling electroresistance; tunnel junctions; ferroelectric tunnel; nanotube ferroelectric ... See more keywords
A fluorite-structured HfO2/ZrO2/HfO2 superlattice based self-rectifying ferroelectric tunnel junction synapse.
Sign Up to like & getrecommendations! Published in 2024 at "Materials horizons"
DOI: 10.1039/d4mh00519h
Abstract: A self-rectifying ferroelectric tunnel junction that employs a HfO2/ZrO2/HfO2 superlattice (HZH SL) combined with Al2O3 and TiO2 layers is proposed. The 6 nm-thick HZH SL effectively suppresses the formation of non-ferroelectric phases while increasing remnant… read more here.
Keywords: tunnel junction; ferroelectric tunnel; hfo2 zro2; self rectifying ... See more keywords
Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5040031
Abstract: Greatly improved ferroelectricity with an excellent remanent polarization of 20 μC/cm2 and enhanced tunneling electroresistance (TER) were achieved with TiN/HfZrO(HZO)/p-type Ge ferroelectric tunnel junctions (FTJs) annealed at a high pressure of 200 atmosphere (atm.). We found… read more here.
Keywords: tunnel junctions; enhanced tunneling; ferroelectric tunnel; high pressure ... See more keywords