A van der Waals Ferroelectric Tunnel Junction for Ultrahigh‐Temperature Operation Memory
Sign Up to like & getrecommendations! Published in 2022 at "Small Methods"
DOI: 10.1002/smtd.202101583
Abstract: Facing the constant scaling down and thus increasingly severe self‐heating effect, developing ultrathin and heat‐insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable… read more here.
Keywords: tunnel junction; van der; temperature operation; der waals ... See more keywords
Ferroelectric Tunnel Junctions Enhanced by a Polar Oxide Barrier Layer.
Sign Up to like & getrecommendations! Published in 2019 at "Nano letters"
DOI: 10.1021/acs.nanolett.9b03056
Abstract: Ferroelectric tunnel junctions (FTJs) have recently aroused significant interest due to the interesting physics controlling their properties and potential application in non-volatile memory devices. In this work, we propose a new concept to design high… read more here.
Keywords: tunnel junctions; polar oxide; layer; tunnel ... See more keywords
Spin-Filtering Ferroelectric Tunnel Junctions as Multiferroic Synapses for Neuromorphic Computing.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c16385
Abstract: As nanoelectronic synapses, memristive ferroelectric tunnel junctions (FTJs) have triggered great interest due to the potential applications in neuromorphic computing for emulating biological brains. Here, we demonstrate multiferroic FTJ synapses based on the ferroelectric modulation… read more here.
Keywords: spin filtering; neuromorphic computing; ferroelectric tunnel; tunnel junctions ... See more keywords
Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays.
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c14952
Abstract: In the quest for highly scalable and three-dimensional (3D) stackable memory components, ferroelectric tunnel junction (FTJ) crossbar architectures are promising technologies for nonvolatile logic and neuromorphic computing. Most FTJs, however, require additional nonlinear devices to… read more here.
Keywords: high density; ferroelectric tunnel; imprinting effect;
Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b18363
Abstract: Recently, complementary resistive switches (CRSs) have attracted considerable attention because of the effective suppression of the sneak leakage that is an inherent problem of crossbar memory arrays. In this work, we propose a new CRS… read more here.
Keywords: tunnel junctions; complementary resistive; ferroelectric tunnel; resistive switches ... See more keywords
Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d1nr06525d
Abstract: Recently, ferroelectric tunnel junctions (FTJs) have gained extensive attention as possible candidates for emerging memory and synaptic devices for neuromorphic computing. However, the working principles of FTJs remain controversial despite the importance of understanding them.… read more here.
Keywords: noise; ferroelectric tunnel; accurate analysis; spectroscopy ... See more keywords
Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5040031
Abstract: Greatly improved ferroelectricity with an excellent remanent polarization of 20 μC/cm2 and enhanced tunneling electroresistance (TER) were achieved with TiN/HfZrO(HZO)/p-type Ge ferroelectric tunnel junctions (FTJs) annealed at a high pressure of 200 atmosphere (atm.). We found… read more here.
Keywords: tunnel junctions; enhanced tunneling; ferroelectric tunnel; high pressure ... See more keywords
Tunneling anomalous Hall effect in a ferroelectric tunnel junction
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5051629
Abstract: We report on a theoretical study on the tunneling anomalous Hall effect (TAHE) in a ferroelectric tunnel junction (FTJ), resulting from spin-orbit coupling (SOC) in the ferroelectric barrier. For ferroelectric barriers with large SOC, such… read more here.
Keywords: anomalous hall; tunnel junction; hall effect; ferroelectric tunnel ... See more keywords
Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0140954
Abstract: We propose an accurate and effective method, low-frequency noise (LFN) spectroscopy, to examine the resistive switching mechanism in ferroelectric tunnel junctions (FTJs) based on pure hafnium oxide (HfOx). Contrary to previous studies that primarily focused… read more here.
Keywords: resistive switching; spectroscopy; cycling stress; ferroelectric tunnel ... See more keywords
Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO x -based metal-ferroelectric-insulator-semiconductor stack
Sign Up to like & getrecommendations! Published in 2021 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac1e50
Abstract: Ferroelectric tunnel junction (FTJ) has been considered as a promising candidate for next-generation memory devices due to its non-destructive and low power operations. In this article, we demonstrate the interlayer (IL) engineering in the FTJs… read more here.
Keywords: interlayer engineering; engineering; ferroelectric tunnel; tunnel junction ... See more keywords
Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction With Different Bottom Electrodes
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3269070
Abstract: To satisfy the demand of high-speed and low-power non-volatile memory in the field of integrated circuits for in-memory computing, HfO2-based ferroelectric tunnel junctions have been development with different film thickness and bottom electrodes. In this… read more here.
Keywords: bottom electrode; bottom; bottom electrodes; phase ... See more keywords