Photoenhanced Electroresistance at Dislocation-Mediated Phase Boundary.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c25259
Abstract: Ferroelectric tunneling junctions have attracted intensive research interest due to their potential applications in high-density data storage and neural network computing. However, the prerequisite of an ultrathin ferroelectric tunneling barrier makes it a great challenge… read more here.
Keywords: electroresistance; phase boundary; dislocation; ferroelectric tunneling ... See more keywords
An ultrathin two-dimensional vertical ferroelectric tunneling junction based on CuInP2S6 monolayer.
Sign Up to like & getrecommendations! Published in 2020 at "Nanoscale"
DOI: 10.1039/d0nr01475c
Abstract: Ferroelectric (FE) materials, especially ABO3 FE perovskite oxides, have been extensively studied for their important applications in memory devices, electronics and sensors. However, the integration of FE perovskite oxides into miniaturized memory and electronic devices… read more here.
Keywords: ferroelectric tunneling; two dimensional; tunneling junction; thickness ... See more keywords