Ferroelectricity in Lu doped HfO2 layers
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4998336
Abstract: Doped HfO2 has become a promising candidate for non-volatile memory devices since it can be easily integrated into existing CMOS technology. Many dopants like Y, Gd, and Sr have been investigated for the stabilization of… read more here.
Keywords: doped hfo2; voltage; polarization; ferroelectricity doped ... See more keywords