Origin of Ferroelectricity in Epitaxial Si-Doped HfO2 Films.
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DOI: 10.1021/acsami.8b19558
Abstract: HfO2-based unconventional ferroelectric materials were recently discovered and have attracted a great deal of attention in both academia and industry. The growth of epitaxial Si-doped HfO2 films has opened up a route to understand the… read more here.
Keywords: doped hfo2; ferroelectricity epitaxial; microscopy; epitaxial doped ... See more keywords