Significant improvement of ferroelectricity and reliability in Hf0.5Zr0.5O2 films by inserting an ultrathin Al2O3 buffer layer
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DOI: 10.1016/j.apsusc.2020.148737
Abstract: Abstract Due to the full compatibility with modern complementary-metal-oxide-semiconductor (CMOS) technology and scalable capability, HfO2-based ferroelectric films have been considered as the most potential materials in micro-nano non-volatile memories. However, despite great achievements, the existence… read more here.
Keywords: layer; ferroelectricity; hf0 5zr0; ferroelectricity reliability ... See more keywords