Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure
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DOI: 10.1002/advs.202200566
Abstract: To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and… read more here.
Keywords: memory; field effect; ferroelectric field; ferroelectrics heterostructure ... See more keywords