Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics
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DOI: 10.1038/s41598-020-58592-5
Abstract: A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe 0.66 Dy 0.24 Tb 0.1 ) 3… read more here.
Keywords: amorphous ferromagnetic; ferromagnetic oxides; integration amorphous; room temperature ... See more keywords