A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications
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DOI: 10.1109/jeds.2019.2909751
Abstract: We fabricated a field-effect transistor (FET) with a gate length of 21 nm whose channel material is a ${c}$ -axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO). A CAAC-IGZO FET with a gate length of 21 nm has… read more here.
Keywords: fet gate; memory; gate length; axis aligned ... See more keywords