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Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2751141
Abstract: The Z2-FET operation as capacitorless DRAM is analyzed using advanced 2-D TCAD simulations for IoT applications. The simulated architecture is built based on actual 28-nm fully depleted silicon-on-insulator devices. It is found that the triggering…
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Keywords:
analysis fet;
fet operation;
operation capacitorless;
extended analysis ... See more keywords