Monolithic integration of InGaAs n-FETs and lasers on Ge substrate.
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DOI: 10.1364/oe.25.005146
Abstract: We report the first monolithic integration of InGaAs channel field-effect transistors with InGaAs/GaAs multiple quantum wells (MQWs) lasers on a common platform, achieving a milestone in the path of enabling low power and high speed… read more here.
Keywords: lasers substrate; integration ingaas; fets lasers; ingaas fets ... See more keywords