Large‐Scale p‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe2
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DOI: 10.1002/aelm.202400386
Abstract: Transition metal dichalcogenides (TMDCs) based large‐scale p‐type floating‐gate field‐effect transistor (FGFET) memory array has been fabricated for the first time. Chemical‐vapor‐deposition grown seamless co‐planes 2H‐ and 1T′‐MoTe2 serve as the channel and source/drain electrodes, respectively.… read more here.
Keywords: memory; memory array; large scale; fgfet memory ... See more keywords