Optimization of thermal field of 150 mm SiC crystal growth by PVT method
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DOI: 10.1039/d2ra02875a
Abstract: The excellent physical properties of SiC as an electronic material determine its important application prospects, especially in the new-energy industry, but the preparation of large-sized materials with high quality is not easy. Therefore, the physical… read more here.
Keywords: crystal growth; optimization thermal; field 150; growth ... See more keywords