Comparison of the evolution of internal bias field of doped hafnia ferroelectric capacitors for the field-cycling reliability
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DOI: 10.1063/5.0026136
Abstract: The discovery of ferroelectricity in HfO2 thin films extends the range of research on next-generation electronic devices. However, for commercial applications, reliable ferroelectric switching characteristics under electric field cycling of HfO2 thin films must be… read more here.
Keywords: thin films; field; field doped; reliability ... See more keywords