Experimental and numerical analysis of the indium-content on the internal electromechanical field in GaN-based light-emitting diodes
Sign Up to like & getrecommendations! Published in 2018 at "Optik"
DOI: 10.1016/j.ijleo.2018.07.081
Abstract: Abstract A second-order polynomial fit function of the experimental built-in electromechanical field in GaN-based light-emitting diodes is presented. The samples range from indium compositions of 10%–30%. The experimental built-in fields of the samples have been… read more here.
Keywords: field gan; gan based; field; based light ... See more keywords