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1
Published in 2020 at "International Journal of Energy Research"
DOI: 10.1002/er.6261
Abstract: The change of the geometry of the flow field plate will affect the distribution of reaction gas and further change the reaction rate inside the cell. This article uses computational fluid dynamics as a research…
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Keywords:
fuel cell;
field plate;
flow field;
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1
Published in 2019 at "Solid-State Electronics"
DOI: 10.1016/j.sse.2019.03.060
Abstract: Abstract In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power logic applications. The fabricated device demonstrated good…
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Keywords:
speed low;
source connected;
connected field;
source ... See more keywords
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Published in 2020 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/42/8/032801
Abstract: A virtual gate model with surface traps at gate edge of drain side is modelled for AlGaN/GaN high electron mobility transistor (HEMT). The model confirms the utility of a field plate (FP) improves sheet carrier…
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Keywords:
gan high;
field;
high electron;
electron ... See more keywords
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1
Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3000239
Abstract: The on-resistance limit of 100 V-class Field-Plate (FP) trench power MOSFETs was analyzed by TCAD simulation. In the previous works, the lateral pitch narrowing effect to reduce the on-resistance has been studied from the viewpoint…
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Keywords:
class field;
resistance limit;
limit;
resistance ... See more keywords
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Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2016.2634091
Abstract: In this paper, the design and characterization of the sloped-field-plate enhanced trench edge termination structure are carried out. For achieving the ideal planar junction breakdown voltage and high dV/dt performance, structural parameters, including the depth…
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Keywords:
italic italic;
sloped field;
tex math;
field plate ... See more keywords
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1
Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2897602
Abstract: Different source field plate (FP) connections are compared for the all-GaN integrated cascode device to address the capacitance matching and turn-off controllability issues reported in the conventional GaN plus Si cascode. The experimental results suggest…
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Keywords:
cascode;
plate designs;
field;
source ... See more keywords
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2
Published in 2022 at "Micromachines"
DOI: 10.3390/mi13091554
Abstract: This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of…
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Keywords:
power high;
gan power;
design;
field plate ... See more keywords
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Published in 2023 at "Micromachines"
DOI: 10.3390/mi14061121
Abstract: This study investigated several AlGaN/GaN Schottky Barrier Diodes (SBDs) with different designs to achieve device optimization. First, the optimal electrode spacing, etching depth, and field plate size of the devices were measured using Technology Computer-Aided…
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Keywords:
algan gan;
gan sbd;
recessed anode;
field plate ... See more keywords