Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
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DOI: 10.1002/adfm.201700384
Abstract: In order to fulfill the information storage needs of modern societies, the performance of electronic nonvolatile memories (NVMs) should be continuously improved. In the past few years, resistive random access memories (RRAM) have raised as… read more here.
Keywords: resistive random; resistive switching; random access; filamentary distributed ... See more keywords