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Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5039755
Abstract: This study investigated the formation of nitrogen-filled voids at the interface between a GaN layer grown on a sapphire substrate by metalorganic vapor phase epitaxy. These voids were formed in the sapphire substrate at the…
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Keywords:
sapphire substrate;
filled voids;
nitrogen filled;
sapphire ... See more keywords