Role of Ambient Hydrogen in HiPIMS-ITO Film during Annealing Process in a Large Temperature Range
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DOI: 10.3390/nano12121995
Abstract: Indium tin oxide (ITO) thin films were prepared by high power impulse magnetron sputtering (HiPIMS) and annealed in hydrogen-containing forming gas to reduce the film resistivity. The film resistivity reduces by nearly an order of… read more here.
Keywords: hydrogen; temperature; film; film resistivity ... See more keywords